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参数资料
| 型号： | MTD1N50E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 131K |
| 代理商： | MTD1N50E1 |
MTD1N50E
http://onsemi.com
5
V DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
DRAINTOSOURCE DIODE CHARACTERISTICS
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
t,TIME
(ns)
VDD = 250 V
ID = 1 A
VGS = 10 V
TJ = 25°C
tr
td(off)
VGS = 0 V
TJ = 25°C
Figure 10. Diode Forward Voltage versus Current
QT, TOTAL CHARGE (nC)
tf
td(on)
12
10
8
6
4
2
0
8
6
4
2
0
100
10
1
100
10
1
360
0
1.0
0.8
0.6
0.4
0.2
0
0.5
0.54
0.58
0.62
0.66
0.82
0.70
0.74
0.78
300
240
180
120
60
ID = 1 A
TJ = 25°C
QT
Q1
Q2
VGS
VDS
Q3
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous draintosource voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal ResistanceGeneral
Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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相关代理商/技术参数 |
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| MTD1N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
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