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参数资料
| 型号： | MTD1N80ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 269K |
| 代理商： | MTD1N80ET4 |
MTD1N80E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
,SINGLE
PULSE
DRAIN–T
O–SOURCE
AS
E
TJ, STARTING JUNCTION TEMPERATURE (°C)
A
V
ALANCHE
ENERGY
(mJ)
20
15
10
5
0
25
50
75
100
125
150
10
1
0.1
0.01
0.1
1
10
100
1000
100
s
10
s
1 ms
10 ms
dc
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
r
(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.05
0.02
0.01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
ID = 1 A
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