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参数资料
| 型号： | MTD20N03HDL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 95K |
| 代理商： | MTD20N03HDL1 |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MTD20N03HDL/D
MTD20N03HDL
Preferred Device
Power MOSFET
20 Amps, 30 Volts, Logic Level
NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
30
Vdc
DrainGate Voltage (RGS = 1.0 MW)
VDGR
30
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
±15
± 20
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 ms)
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
74
0.6
1.75
W
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
EAS
200
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq.in. drain pad size.
NChannel
D
S
G
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
1 Gate
2 Drain
4
Drain
DPAK
CASE 369C
STYLE 2
1 2
3
4
3 Source
4
Drain
DPAK
CASE 369D
STYLE 2
1
2
3
4
30 V
30 m
W@5.0 V
RDS(on) TYP
20 A
(Note 1)
ID MAX
V(BR)DSS
YWW
20N
03HLG
YWW
20N
03HL
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
2
Drain
1 Gate
3 Source
Y
= Year
WW
= Work Week
20N03HL = Device Code
G
= PbFree Package
MARKING DIAGRAM & PIN ASSIGNMENTS
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