- 您现在的位置：买卖IC网 > PDF目录96091 > MTD20N03HDL1 (ON SEMICONDUCTOR) 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTD20N03HDL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 95K |
| 代理商： | MTD20N03HDL1 |
MTD20N03HDL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
43
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current
(VGS = ±15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
5.0
2.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
0.034
0.030
0.040
0.035
W
DraintoSource OnVoltage (VGS = 5.0 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
0.55
0.8
0.7
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 10 Adc)
gFS
10
13
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss
880
1260
pF
Output Capacitance
Coss
300
420
Transfer Capacitance
Crss
80
150
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 5.0 Vdc, RG = 9.1 W)
td(on)
13
20
ns
Rise Time
tr
212
238
TurnOff Delay Time
td(off)
23
40
Fall Time
tf
84
140
Gate Charge (See Figure 8)
(VDS = 24 Vdc, ID = 20 Adc, VGS = 5.0 Vdc)
QT
13.4
18.9
nC
Q1
3.0
Q2
7.3
Q3
6.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.95
0.87
1.1
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
trr
33
ns
ta
23
tb
10
Reverse Recovery Stored
Charge
QRR
33
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. Cpk = Absolute Value of Spec (SpecAVG/3.516 mA).
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20N03HDLT4G | 20 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDL1 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06VT4 | 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06VT4 | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDL1G | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N03HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N03HL | 制造商:Motorola Inc 功能描述:20N03HL |
| MTD20N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
发布紧急采购，3分钟左右您将得到回复。