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| 型号： | MTD20N06VT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 221K |
| 代理商： | MTD20N06VT4 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTD20N06V/D
MTD20N06V
Power Field Effect
Transistor
NChannel DPAK
TMOS V is a new technology designed to achieve an onresistance
area product about onehalf that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50 and 60
volt TMOS devices. Just as with our TMOS EFET designs, TMOS V
is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed switching
applications in power supplies, converters and power motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Onresistance Area Product about Onehalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than EFET Predecessors
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS EFET
Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GatetoSource Voltage — Continuos
— Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 μs)
ID
IDM
20
13
70
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 2)
PD
60
0.4
2.1
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL =
20 Apk, L = 1.0 mH, RG = 25 Ω)
EAS
200
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient (Note 1)
— Junction to Ambient (Note 2)
RθJC
RθJA
2.5
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
NChannel
D
S
G
http://onsemi.com
60 V
65 mW
RDS(on) TYP
20 A
ID MAX
V(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
Device
Package
Shipping
ORDERING INFORMATION
MTD20N06V
DPAK
75 Units/Rail
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING
DIAGRAM
T20N06V = Device Code
Y
= Year
WW
= Work Week
MTD20N06VT4
DPAK
2500 Tape & Reel
1 2
3
4
YWW
T20
N06V
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相关代理商/技术参数 |
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| MTD20P03 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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