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| 型号： | MTD20N06VT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 221K |
| 代理商： | MTD20N06VT4 |
MTD20N06V
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I D
,DRAIN
CURRENT
(AMPS)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
10
100
0.1
dc
100
μs
1 ms
10 ms
10
μs
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
25
50
75
100
125
ID = 20 A
150
0
200
140
120
100
160
80
60
40
20
175
180
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PDF描述 |
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| MTD20P03HDL1G | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDL | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDL1 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20P03 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
| MTD20P03HDLT4 | 功能描述:MOSFET P-CH 30V 19A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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