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参数资料
| 型号： | MTD1P40E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 182K |
| 代理商： | MTD1P40E |
MTD1P40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
5 V
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
DI
,DRAIN
CURRENT
(AMPS)
1.8
1.6
1.4
0.6
0
02
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
8 V
TJ = 25°C
DI
,DRAIN
CURRENT
(AMPS)
2
1.5
1
0.5
0
2
468
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
TJ = –55°C
25
°C
0.2
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
15 V
4.4
5.2
5.6
4.8
0.4
1.4
12
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
2
6
4
0
0.2
0.4
12
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 100°C
–55
°C
4.0
0
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
VGS = 0 V
0
200
500
100
300
TJ = 125°C
1000
10
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 0.5 A
– 5050150
75
–25
0
25
0.25
2
1.5
1
0.5
0
400
100
°C
0.4
1.2
1.0
0.8
25
°C
0.6
0.8
1.2
1.4
1.6
1.8
8
10
13
5
7
9
4 V
4.5 V
5.5 V
6 V
0.6
1.6
1.2
0.2
0.8
1.8
4.6
5.4
5.8
5.0
4.2
6.0
125
100
0.75
1.25
1.75
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