参数资料
型号: MTD3055VL
厂商: Fairchild Semiconductor
文件页数: 1/3页
文件大小: 0K
描述: MOSFET N-CH 60V 12A DPAK
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 180 毫欧 @ 6A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 5V
输入电容 (Ciss) @ Vds: 570pF @ 25V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: MTD3055VLDKR
August 1999
DISTRIBUTION GROUP*
MTD3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
? 12 A, 60 V. R DS(ON) = 0.18 ? @ V GS = 5 V
? Critical DC electrical parameters specified at elevated
temperature.
? Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
? Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
? 175 ° C maximum junction temperature rating.
*
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MTD3055VL Rev. A
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