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参数资料
| 型号： | MTD3N25EG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 250 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 253K |
| 代理商： | MTD3N25EG |
MTD3N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
7
8
10
0
1
3
2
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.5
5.5
6.5
6.0
7.5
0
2
4
5
6
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1.0
2.5
3.5
4.5
6.0
0.4
1.2
2.0
3.2
0
1.5
3.0
4.0
5.0
6.0
1.0
1.2
1.4
1.6
1.7
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
1.6
2.0
0
100
200
1.0
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = – 55°C
VGS = 10 V
9
6
5
3
1
TJ = 25°C
VGS = 10 V
7 V
15 V
25
°C
100
°C
VGS = 0 V
1
3
3.0
4.0
4.5
5.0
7.0
2.8
2.4
1.6
0.8
0.5
1.5
2.0
3.0
4.0
5.0
5.5
0.5
2.0
1.0
3.5
4.5
2.5
1.1
1.3
1.5
5.5
1.2
0.8
0.4
50
150
250
5
4
2.5
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
VGS = 10 V
ID = 1.5 A
TJ = 125°C
6 V
5 V
4 V
100
°C
25
°C
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