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参数资料
| 型号： | MTD4N20E1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 259K |
| 代理商： | MTD4N20E1 |
Semiconductor Components Industries, LLC, 2003
September, 2004 Rev. XXX
1
Publication Order Number:
MTD4N20E/D
MTD4N20E
Preferred Device
Power MOSFET
4 Amps, 200 Volts
NChannel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
200
Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
4.0
2.6
12
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 4.0 Apk, L = 10 mH, RG = 25 )
EAS
80
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
Device
Package
Shipping
ORDERING INFORMATION
MTD4N20E
DPAK
75 Units/Rail
MTD4N20E1
DPAK
Straight Lead
75 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
MTD4N20ET4
DPAK
2500 Tape & Reel
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENTS
http://onsemi.com
Y
= Year
WW
= Work Week
4N20E
= Device Code
200 V
0.98
W
RDS(on) TYP
4.0 A
ID MAX
V(BR)DSS
CASE 369C
DPAK
(Surface Mount)
STYLE 2
1
2
3
4
CASE 369D
DPAK
(Straight Lead)
STYLE 2
YWW
T4
N20E
1
Gate
3
Source
2
Drain
4
Drain
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
YWW
T4
N20E
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