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| 型号： | MTD5P06VT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 5A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MTD5P06VT4GOSDKR |
MTD5P06V
10
9
QT
V GS
60
54
100
T J = 25 ° C
I D = 5 A
8
48
V DD = 30 V
7
Q1
Q2
42
V GS = 10 V
t r
6
36
t d(off)
5
30
10
t f
t d(on)
4
3
24
18
2
1
Q3
V DS
T J = 25 ° C
I D = 5 A
12
6
0
0
2
4
6
8
10
12
0
14
1
1
10
100
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?To?Source and Drain?To?Source
Voltage versus Total Charge
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN?TO?SOURCE DIODE CHARACTERISTICS
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
T J = 25 ° C
V GS = 0 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain?to?source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T C ) of 25 ° C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance?General
Data and Its Use.”
Switching between the off?state and the on?state may
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the
transition time (t r ,t f ) do not exceed 10 m s. In addition the total
power averaged over a complete switching cycle must not
exceed (T J(MAX) ? T C )/(R q JC ).
A Power MOSFET designated E?FET can be safely used
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non?linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E?FETs can withstand the stress of
drain?to?source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I D can safely be
assumed to equal the values indicated.
in switching circuits with unclamped inductive loads. For
http://onsemi.com
5
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| MTD5P06VT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MTD5P06VT4GV | 功能描述:MOSFET Single P-Ch 60V 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| MTD6000PT-T | 功能描述:PHOTOTRANS 880NM PIGTAIL DOME RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电晶体管 系列:- 标准包装:1,200 系列:- 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:1mA 电流 - 暗 (Id)（最大）:100nA 波长:880nm 视角:24° 功率 - 最大:100mW 安装类型:通孔 方向:顶视图 封装/外壳:径向 |
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