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参数资料
| 型号： | MTD6N10ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 211K |
| 代理商： | MTD6N10ET4 |
MTD6N10E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
10
100
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
VGS = 20 V
SINGLE PULSE
TC = 25°C
40
20
10
5
ID = 6 A
30
10
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1.0E–05
1.0E–04
1.0E–03
0.01
0.1
0.2
0.02
0.01
SINGLE PULSE
0.1
0.05
1.0
D = 0.5
100
s
1 ms
10 ms
dc
50
35
25
45
15
1.0E–02
1.0E–01
1.0E+00
1.0E+01
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD6N15 | 制造商:Rochester Electronics LLC 功能描述: |
| MTD6N15-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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