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参数资料
| 型号： | MTM23110 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SMINI3-G1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 424K |
| 代理商： | MTM23110 |
Silicon MOSFETs (Small Signal)
Publication date: October 2009
SJF00048BED
1
MTM23110
Silicon P-channel MOSFET
For switching circuits
Features
Low voltage drive (1.8 V, 2.5 V, 4 V)
Realization of low on-resistance, using extremely ne process
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
-
12
V
Gate-source surrender voltage
VGSS
±
8
V
Drain current
ID
-
4.0
A
Peak drain current *1
IDP
-
16
A
Power dissipation *2
PD
500
mW
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *1: Pulse width ≤ 10 s, Duty Cycle ≤ 1%
*2: Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
Absolute maximum rating without heat sink for PD is 150 mW
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = -1 mA, VGS = 0
-
12
V
Drain-source cutoff current
IDSS
VDS = -12 V, VGS = 0
-
1.0
A
Gate-source cutoff current
IGSS
VGS = ±6.4 V, VDS = 0
±
10
A
Gate threshold voltage
VTH
ID = -1.0 mA, VDS = -6.0 V
-
0.3
-
0.65
-
1.0
V
Drain-source ON resistance *1
RDS(on)
ID = -1 A, VGS = -4.0 V
30
40
mW
ID = - 0.5 A, VGS = -2.5 V
35
55
ID = - 0.2 A, VGS = -1.8 V
50
75
Forward transfer admittance *1
Yfs ID = -1.0 A, VDS = -10 V, f = 1 kHz
3.5
S
Short-circuit input capacitance
(Common source)
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
1200
pF
Short-circuit output capacitance
(Common source)
Coss
110
pF
Reverse transfer capacitance (Common source)
Crss
110
pF
Turn-on time *2
ton
VDD = -6 V, VGS = 0 V to -4 V, ID = -1A
50
ns
Turn-off time *2
toff
VDD = -6 V, VGS = -4 V to 0 V, ID = -1A
300
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement: Pulse width < 300 s, Duty Cycle < 2%
*2: ton , toff measurement circuit
VCC = 6 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1 A
RL = 6
VOUT
VIN
D
G
S
VIN
50
ton
toff
0 V
4 V
VIN
VOUT
10%
90%
10%
Package
Code
SMini3-G1
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: DM
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相关代理商/技术参数 |
参数描述 |
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| MTM231100L | 功能描述:MOSFET P-CH 12V 4A SMINI-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| MTM231232LBF | 制造商:Panasonic Industrial Company 功能描述:Schottky Diode 30V 1A 0.47V SMini2-F4-B |
| MTM232230L | 功能描述:MOSFET N-CH 20V 4.5A SMINI-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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