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参数资料
| 型号： | MTM86628 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, WSSMINI6-F1, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 508K |
| 代理商： | MTM86628 |
Multi Chip Discrete
Publication date: November 2008
SJF00111AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR = 15 V, IF = 700 mA
Low on-resistance: Ron = 300 mW (VGS = –4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 80 pF
Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm × 1.6
mm × 0.5 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
VDSS
–20
V
Gate-source surrender voltage
VGSS
±
12
V
Drain current
ID
–1.0
A
Peak drain current *1
IDP
–4.0
A
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Total power dissipation
PD1*2
540
mW
PD2*3
150
mW
SBD
Reverse voltage
VR
15
V
Forward current (Average)
IF(AV)
700
mA
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Note) *1: t = 10 s, Duty Cycle < 1%
*2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm
Copper foil of the drain portion should have a area of 300 mm2 or more
*3: Stand-alone (without the board)
Package
Code
WSSMini6-F1
Pin Name
1: Gate
4: Cathode
2: Source
5: Drain
3: Anode
6: Drain
Marking Symbol: PL
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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