参数资料
型号: MTM86628
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, WSSMINI6-F1, 6 PIN
文件页数: 5/5页
文件大小: 508K
代理商: MTM86628
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
相关PDF资料
PDF描述
MTP10N10E 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP1302 42 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP1N50 1 A, 500 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP1N45 1 A, 450 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP1N55 1 A, 550 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
MTM867270LBF 功能描述:MOSFET N-CH 20V 2.2A WSSMINI6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MTM8N35 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
MTM8N40 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
MTM8N60 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
MTM8P08 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR