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参数资料
| 型号： | MTM68423 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | WMINI8-F1, 8 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 256K |
| 代理商： | MTM68423 |
Attains the industry’s lowest on-resistance
Small, Low On-Resistance MOSFET Series
Overview
The new MOSFET contribute to reduced dimensions and weight as
well as lower power consumption for cellular phones, digital still
cameras, digital video cameras, notebook PCs, AV systems and other
electronic equipment. This, in turn, results in longer operation time
for battery-driven equipment.
Feature
Latest micromachining process achieves the industry’s lowest on-
resistance.
Low voltage operation possible (1.8V, 2.5V)
Halogen Free Package
Applications
Load switch circuit, switching circuit
New publication, effective from 1 Oct. 2008
M00695HE
Specifications
Unit : mm
WMini8-F1
WSMini6-F1
Unit : mm
■
Internal Wiring
MTM76 series
DS
D
DG
D
DD
SG
MTM68 series
Dual
Pch
WSMini6-F1
Single
1200
MTM68423
MTM68410
MTM76123
MTM76110
Part No.
1000
-
45
40
-4.2
± 10
-20
± 8
-12
-3.0
± 10
-20
± 8
-12
1000
-
42
36
45
35
30
1200
50
37
32
-4.0
type
WMini8-F1
-4.8
VGS= 1.8V
VGS= 2.5V
VGS= 4.0V
VGSS
(V)
RDS(on) (typ) (mΩ)
Package
Ciss
（
pF）
ID
（
A)
VDSS
(V)
Polarity
+0.05
0.02
2.00 ±0.10
1.30 ±0.10
(0.65)
2.10
±
0.10
(0.20)
1.70
±
0.10
0.70
±
0.10
6-0.20
+0.05
0.03
0.13
65
4
12
3
0to
0.10
5°
(0.15)
2.90 ±0.10
12
3
4
87
6
5
2.80
±
0.10
2.40
±
0.10
(0.20)
0.80
±
0.05
0to
0.02
+0.10
0.05
0.16
+0.10
0.05
8-0.30
0.65
(0.15)
5°
相关PDF资料 |
PDF描述 |
|---|---|
| MTM86628 | 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTP10N10E | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP1302 | 42 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP1N50 | 1 A, 500 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP1N45 | 1 A, 450 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTM6N55 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Power Field Effect Transistor |
| MTM761100LBF | 功能描述:MOSFET PCH MOS FET FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTM76111 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:VIN = 2.9V to 5.5V 2ch,0.8A General-purpose High Efficiency Power LSI |
| MTM761110LBF | 功能描述:MOSFET PCH MOS FET FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTM761230LBF | 功能描述:MOSFET PCH MOS FET FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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