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| 型号： | MTD6N20ET4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 6A DPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 25V |
| 功率 - 最大： | 1.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | MTD6N20ET4OSDKR |
MTD6N20E
Power MOSFET
6 A, 200 V, N ? Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain ? to ? source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
http://onsemi.com
6 AMPERES, 200 VOLTS
R DS(on) = 460 m W
Features
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
N ? Channel
D
S
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
Drain Current
? Continuous
? Continuous @ 100 ° C
? Single Pulse (t p ≤ 10 m s)
Symbol
V DSS
V DGR
V GS
V GSM
I D
I D
I DM
Value
200
200
± 20
± 40
6.0
3.8
18
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
1 2
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
4 Drai n
1 2 3
Gate Drain Source
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
P D
T J , T stg
50
0.4
1.75
? 55 to
150
W
W/ ° C
W
° C
6N20E
Y
WW
G
Device Code
= Year
= Work Week
= Pb ? Free Package
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 80 Vdc, V GS = 10 Vdc,
I L = 6.0 Apk, L = 3.0 mH, R G = 25 W )
E AS
54
mJ
ORDERING INFORMATION
Device Package Shipping ?
? Junction ? to ? Ambient (Note 2)
Thermal Resistance ? Junction ? to ? Case R q JC 2.50 ° C/W
? Junction ? to ? Ambient (Note 1) R q JA 100
R q JA 71.4
Maximum Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 secs
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our Pb ? Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MTD6N20ET4G DPAK 2500 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
April, 2013 ? Rev. 6
1
Publication Order Number:
MTD6N20E/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD6N20ET4G | 功能描述:MOSFET NFET DPAK 200V 6A 700mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N20ET5G | 功能描述:MOSFET NFET DPAK 200V 6A 700MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6P10E | 功能描述:MOSFET P-CH 100V 6A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTD6P10ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
| MTD7030 | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:PHOTO DIODE |
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