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| 型号： | MTD6P10E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 6A DPAK |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 |
| 标准包装： | 75 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 660 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 840pF @ 25V |
| 功率 - 最大： | 1.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 其它名称： | MTD6P10EOS |
MTD6P10E
Preferred Device
Power MOSFET
6 Amps, 100 Volts
P ? Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain ? to ? source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
http://onsemi.com
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
V (BR)DSS
100 V
R DS(on) TYP
660 m W
P ? Channel
D
I D MAX
6.0 A
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb ? Free Packages are Available
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
Drain Current
? Continuous
? Continuous @ 100 ° C
? Single Pulse (t p ≤ 10 m s)
V DSS
V DGR
V GS
V GSM
I D
I D
I DM
100
100
± 15
± 20
6.0
3.9
18
Vdc
Vdc
Vdc
Vpk
Adc
Apk
1 2
3
4
DPAK
CASE 369C
STYLE 2
Y
WW
Gate 1
Drain 2
Source 3
= Year
= Work Week
YWW
T6
P10EG
4
Drain
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 2)
P D
50
0.4
1.75
W
W/ ° C
W
T6P10E
G
= Device Code
= Pb ? Free Package
Operating and Storage Temperature Range
T J , T stg
? 55 to
150
° C
ORDERING INFORMATION
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc,
I L = 6.0 Apk, L = 10 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
E AS
R q JC
R q JA
R q JA
180
2.50
100
71.4
mJ
° C/W
Device
MTD6P10E
MTD6P10EG
MTD6P10ET4
MTD6P10ET4G
Package
DPAK
DPAK
(Pb ? Free)
DPAK
DPAK
Shipping ?
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
Maximum Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR ? 4 board using the 0.5 sq.in. drain pad size.
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 5
1
Publication Order Number:
MTD6P10E/D
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相关代理商/技术参数 |
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| MTD6P10ET4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
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