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参数资料
| 型号： | MTDF1C02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MICROPAK-8 |
| 文件页数： | 15/16页 |
| 文件大小： | 166K |
| 代理商： | MTDF1C02HDR2 |
MTDF1C02HD
http://onsemi.com
8
N–Channel
P–Channel
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
C,
CAP
ACIT
ANCE
(pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
0
10
15
VGS
VDS
TJ = 25°C
VDS = 0 V VGS = 0 V
400
200
0
20
Ciss
Coss
Crss
55
Ciss
Crss
600
800
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
0
1.0
2.0
3
3.0
ID = 1.7 A
TJ = 25°C
VGS
4
1
0
6
5
18
15
9
6
0
VDS
QT
Q1
Q2
4.0
5.0
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
3
2
12
Q3
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1.0
100
10
1.0
VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
10
20
-10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
800
600
400
C,
CAP
ACIT
ANCE
(pF)
200
0
Ciss
Crss
Coss
TJ = 25°C
VGS = 0 V
QG, TOTAL GATE CHARGE (nC)
6.0
0
3
1
0
V
1.0
2.0
3.0
4.0
5.0
2
4
5
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
VGS
VDS
TJ = 25°C
ID = 1.2 A
VDS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
12
4.0
0
8.0
16
20
QT
Q1
Q2
Q3
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
t,TIME
(ns)
10
TJ = 25°C
ID = 1.2 A
VDD = 10 V
VGS = 4.5 V
tr
tf
td(off)
td(on)
VGS
VDS
相关PDF资料 |
PDF描述 |
|---|---|
| MTDF1N02HDR2 | 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1N03HDR2 | 2000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1N03HDR2 | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1P02HDR2 | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF2N06HDR2 | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTDF1N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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