参数资料
型号: MTDF2N06HDR2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MICROPAK-8
文件页数: 1/12页
文件大小: 109K
代理商: MTDF2N06HDR2
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MTDF2N06HD/D
MTDF2N06HD
Preferred Device
Power MOSFET
2 Amps, 60 Volts
N–Channel Micro8
t, Dual
Micro8 devices are an advanced series of Power MOSFETs that
contain monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode has
a very low reverse recovery time. Typical applications are dc–dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature Micro8 Surface Mount Package – Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
ID
IDM
1.5
12
Adc
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
1.25
W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to
150
°C
Continuous Source Current (Diode
Conduction) (Note 3.)
IS
0.9
Adc
THERMAL RESISTANCE
Junction–to–Ambient (Note 1.)
R
θJA
100
°C/W
1. When mounted on 1
″ square FR–4 or G–10 board (VGS = 10 V, @
10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. When mounted on FR–4 board, t
≤ 10 seconds
2 AMPERES
60 VOLTS
RDS(on) = 220 mW
1
8
Device
Package
Shipping
ORDERING INFORMATION
MTDF2N06HDR2
Micro8
4000 Tape & Reel
Micro8, Dual
CASE 846A
STYLE 2
http://onsemi.com
N–Channel
BA
MARKING
DIAGRAM
WW
= Date Code
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
D
S
G
相关PDF资料
PDF描述
MTDF2N06HD 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTM23224 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTM24N50E 24 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
MHM25N10HX 25 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
MHM5N100HX 5 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
相关代理商/技术参数
参数描述
MTD-H5 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件状态:Not Recommended For New Designs 功能:收发器,HSPA,调制解调器 调制或协议:HSPA+ 频率:850MHz,900MHz,1.7GHz,1.9GHz,2.1GHz 应用:- 接口:USB 灵敏度:- 功率 - 输出:- 数据速率(最大值):21Mbps 特性:USB 供电 电压 - 电源:5V,USB 标准包装:10
MTD-H5-2.0 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件状态:有效 功能:- 调制或协议:HSPA+ 频率:850MHz,900MHz,1.7GHz,1.8GHz,1.9GHz,2.1GHz 应用:通用 接口:USB 灵敏度:- 功率 - 输出:- 数据速率(最大值):21Mbps 特性:- 电压 - 电源:5V 标准包装:10
MTDK1S6R 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors)
MTDK3S6R 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET
MTDM8148CCYE2 制造商:Texas Instruments 功能描述:CENTAURUS 3.0W