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参数资料
| 型号： | MTDF2N06HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MICROPAK-8 |
| 文件页数： | 6/12页 |
| 文件大小： | 109K |
| 代理商： | MTDF2N06HDR2 |
MTDF2N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R
DSon(
),
DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
2
4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.8
01
2
4
0.30
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
10
30
1E-10
1E-09
1E-08
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(A)
VDS ≥ 10 V
TJ = 125°C
25°C
-55°C
TJ = 25°C
VGS = 0 V
ID = 1.5 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
5
68
10 V
-50
-25
0
25
50
75
100
125
150
TJ = 125°C
1.0
50
100°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
1
3
1
3
4
0.4
0.14
0.18
0.22
0
0.5
0
1E-11
1.0
0.2
3
25°C
0.8
1.8
TJ = 25°C
VGS = 2.5 V
2.9 V
1
0
5
1E-07
20
40
3.5 V
3.7 V
10 V
4.5 V
34
0.26
0.6
W
3.3 V
6.0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| MTD-H5-2.0 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件状态:有效 功能:- 调制或协议:HSPA+ 频率:850MHz，900MHz，1.7GHz，1.8GHz，1.9GHz，2.1GHz 应用:通用 接口:USB 灵敏度:- 功率 - 输出:- 数据速率（最大值）:21Mbps 特性:- 电压 - 电源:5V 标准包装:10 |
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| MTDM8148CCYE2 | 制造商:Texas Instruments 功能描述:CENTAURUS 3.0W |
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