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参数资料
| 型号： | MTDF1N02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MICROPAK-8 |
| 文件页数： | 7/12页 |
| 文件大小： | 126K |
| 代理商： | MTDF1N02HDR2 |
MTDF1N02HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
2.7 V
VGS = 4.5 V
TJ = 25°C
2.3 V
2.1 V
1.9 V
2.7 V
4.5 V
VGS = 10 V
1.7 V
1.5 V
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
1.0
3.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.05
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1.0
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
4.0
2.0
4.0
1.0
2.0
2.5
0.5
0.15
0
1.0
2.0
10
0
5.0
10
15
20
0.09
3.0
4.0
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.4
1.2
1.6
2.0
VGS = 4.5 V
ID = 0.85 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
100°C
1.2
1.5
1.0
0.11
0.13
1000
0.1
25°C
0.8
0.4
0.5
0.6
0.3
0.1
0.2
0
2.0
4.0
8.0
6.0
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID = 1.7 A
TJ = 25°C
0
0.07
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相关代理商/技术参数 |
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|---|---|
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| MTD-H5 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件状态:Not Recommended For New Designs 功能:收发器，HSPA，调制解调器 调制或协议:HSPA+ 频率:850MHz，900MHz，1.7GHz，1.9GHz，2.1GHz 应用:- 接口:USB 灵敏度:- 功率 - 输出:- 数据速率（最大值）:21Mbps 特性:USB 供电 电压 - 电源:5V，USB 标准包装:10 |
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