参数资料
型号: MTDF1N03HDR2
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 7/12页
文件大小: 225K
代理商: MTDF1N03HDR2
MTDF1N03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.5
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.4
0.5
0.6
0.08
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
0.3
4
2
0.1
TJ = 25°C
2
4
1
2
2.5
3
3.5
4
0.2
01
2
10
0
5
10
15
30
20
25
0
0.12
0.16
3
24
8
6
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
34
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 0.85 A
125
75
25
–25
VGS = 0 V
TJ = 125°C
100
°C
1
6 V
2.7 V
2.9 V
3.1 V
4.5 V
VGS = 10 V
ID = 1.7 A
TJ = 25°C
3.3 V
1.5
0
0.1
0.14
0.18
0.1
25
°C
2.3 V
2.5 V
3.9 V
3.7 V
3.5 V
4.5
2.5
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