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参数资料
| 型号： | MTDF1P02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MICROPAK-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 137K |
| 代理商： | MTDF1P02HDR2 |
MTDF1P02HD
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
V
Gate–to–Source Voltage – Continuous
VGS
± 8.0
V
1
″ SQ.
FR–4 or G–10 PCB
Figure 1 below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
100
1.25
10
2.3
1.9
19
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
200
0.63
5.0
1.6
1.3
13
°C/W
Watts
mW/
°C
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
2 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
RTHJA
PD
ID
IDM
300
0.42
3.33
1.3
1.1
11
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 3.6 Apk, L = 25 mH, RG = 25 W)
EAS
160
mJ
1. Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1
, Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
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