- 您现在的位置：买卖IC网 > PDF目录378679 > MTE30N50E (MOTOROLA INC) TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM PDF资料下载
参数资料
| 型号： | MTE30N50E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
| 中文描述： | 30 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 229K |
| 代理商： | MTE30N50E |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new
energy design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, PWM motor controls, and other
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
2500 V RMS Isolated ISOTOP Package
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
IDSS and VDS(on) Specified at Elevated Temperature
U.L. Recognized, File #E69369
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
500
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
ID
ID
IDM
30
12
80
Adc
Apk
PD
250
2.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL= 30 Apk, L = 10 mH, RG = 25
)
3000
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.5
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
260
°
C
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTE30N50E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.150 OHM
Motorola Preferred Device
D
S
G
SOT–227B
1
2
3
4
1. Source
2. Gate
3. Drain
4. Source 2
相关PDF资料 |
PDF描述 |
|---|---|
| MTE53N50E | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
| MTH6N55 | Power Field Effect Transistor |
| MTH6N60 | Power Field Effect Transistor |
| MTM6N55 | Power Field Effect Transistor |
| MTIL113 | 6-Pin DIP Optoisolators Darlington Output |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTE310F11-UV | 功能描述:Ultraviolet (UV) Emitter 310nm 6.5V 40mA 113° TO-18-2 Metal Can 制造商:marktech optoelectronics 系列:MTE-F11 包装:散装 零件状态:有效 类型:UV 电流 - DC 正向（If）:40mA 不同 If 时的辐射强度（Ie）（最小值）:- 波长:310nm 电压 - 正向（Vf）（典型值）:6.5V 视角:113° 朝向:顶视图 工作温度:-20°C ~ 85°C（TA） 安装类型:通孔 封装/外壳:TO-18-2 金属罐 标准包装:1 |
| MTE310F13-UV | 功能描述:Ultraviolet (UV) Emitter 310nm 6.5V 40mA 114° TO-39-2 Lens Top Metal Can 制造商:marktech optoelectronics 系列:MTE-F13 包装:散装 零件状态:有效 类型:UV 电流 - DC 正向（If）:40mA 不同 If 时的辐射强度（Ie）（最小值）:- 波长:310nm 电压 - 正向（Vf）（典型值）:6.5V 视角:114° 朝向:顶视图 工作温度:-30°C ~ 80°C（TA） 安装类型:通孔 封装/外壳:TO-39-2 透镜顶部金属罐 标准包装:1 |
| MTE310H21-UV | 功能描述:Ultraviolet (UV) Emitter 310nm 6.5V 40mA 24° TO-46-2 Lens Top Metal Can 制造商:marktech optoelectronics 系列:MTE-H21 包装:散装 零件状态:有效 类型:UV 电流 - DC 正向（If）:40mA 不同 If 时的辐射强度（Ie）（最小值）:- 波长:310nm 电压 - 正向（Vf）（典型值）:6.5V 视角:24° 朝向:顶视图 工作温度:-30°C ~ 80°C（TA） 安装类型:通孔 封装/外壳:TO-46-2 透镜顶部金属罐 标准包装:1 |
| MTE310H32-UV | 功能描述:Ultraviolet (UV) Emitter 310nm 6.5V 40mA 6° TO-46-2 Lens Top Metal Can 制造商:marktech optoelectronics 系列:MTE-H32 包装:散装 零件状态:有效 类型:UV 电流 - DC 正向（If）:40mA 不同 If 时的辐射强度（Ie）（最小值）:- 波长:310nm 电压 - 正向（Vf）（典型值）:6.5V 视角:6° 朝向:顶视图 工作温度:-30°C ~ 80°C（TA） 安装类型:通孔 封装/外壳:TO-46-2 透镜顶部金属罐 标准包装:1 |
| MTE310H33-UV | 功能描述:Ultraviolet (UV) Emitter 310nm 6.5V 40mA 6° TO-5-2 Lens Top Metal Can 制造商:marktech optoelectronics 系列:MTE-H33 包装:散装 零件状态:有效 类型:UV 电流 - DC 正向（If）:40mA 不同 If 时的辐射强度（Ie）（最小值）:- 波长:310nm 电压 - 正向（Vf）（典型值）:6.5V 视角:6° 朝向:顶视图 工作温度:-30°C ~ 80°C（TA） 安装类型:通孔 封装/外壳:TO-5-2 透镜顶部金属罐 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。