参数资料
型号: MTE30N50E
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM
中文描述: 30 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 2/8页
文件大小: 229K
代理商: MTE30N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
560
566
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
10
200
μ
Adc
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.2
7.0
4.0
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
VDS(on)
0.13
0.15
Ohms
4.1
5.0
7.0
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
gFS
17
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
7200
10080
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
775
1200
Transfer Capacitance
120
250
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 4.7
)
td(on)
tr
td(off)
tf
32
60
ns
Rise Time
(VDD = 250 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
105
175
Turn–Off Delay Time
160
275
Fall Time
115
200
Gate Charge
(see figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
235
350
nC
(VDS = 400 Vdc, ID = 30 Adc,
35
110
65
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
0.95
0.88
1.2
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
485
ns
(IS = 30 Adc, VGS = 0 Vdc,
312
tb
173
Reverse Recovery Stored Charge
QRR
8.2
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
LS
5.0
nH
Internal Source Inductance
5.0
nH
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
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