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参数资料
| 型号： | MTM23224 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SMINI3-G1, 3 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 273K |
| 代理商： | MTM23224 |
°C
mW
A
V
Unit
2
18
I
DP
Drain peak current
4.5
I
D
Drain current
± 10
V
GSS
Gate-Source voltage
20
V
DSS
Drain-Source voltage
1
500
P
D
Power dissipation
150
T
ch
Channel temperature
55 to +150
T
stg
Storage temperature
Note
Rating
Symbol
Parameter
pF
85
VDS = 10 V , VGS = 0 V, f = 1 MHz
Coss
Small-signal short-circuit
output capacitance
pF
1200
VDS = 10 V , VGS = 0 V, f = 1 MHz
Ciss
Small-signal short-circuit
input capacitance
m
28
20
ID = 1 A , VGS = 4.0 V
RDS(ON)
Drain resistance 1 *3
V
1.3
0.85
0.4
ID = 1 mA , VDS = 10.0 V
Vth
Gate threshold voltage
A
± 10
VGS = ± 8 V , VDS = 0 V
IGSS
Gate-Source cutoff voltage
A
-1.0
VDS = 20 V , VGS = 0 V
IDSS
Drain-Source cutoff
voltage
ns
220
VDD = 10 V , VGS = 4to 0 V, ID = 1 A
toff
Turn-off time
V
20
ID = 1 mA , VGS = 0 V
VDSS
Drain-Source voltage
m
40
26
ID = 0.6 A , VGS = 2.5 V
RDS(ON)
Drain resistance 2 *3
S
3.5
ID = 1 A , VDS = 10 V, f = 1 kHz
|Yfs|
Forward transfer
admittance *3
ns
16
VDD = 10 V , VGS = 0 to 4 V, ID = 1 A
ton
Turn-on time
pF
80
VDS = 10 V , VGS = 0 V, f = 1 MHz
Crss
Small-signal reverse
transfer capacitance
Typ.
Min.
Unit
Max.
Condition
Symbol
Parameter
MTM23223
Absolute Maximum Ratings
Electrical characteristics Ta = 25
°C ± 3°C
Silicon Field Effect Transistors
N-Channel MOS Type
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
1) Measuring on Ceramic substrate at 40×38×0.1 mm. Absolute maximum rating PD without heat sink shall be made 150 mW.
2) Pulse Width ≦10 s, Duty Cycle ≦1 %
3) Pulse Test:Pulse Width <300 s, Duty Cycle <2 %
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相关代理商/技术参数 |
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