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参数资料
| 型号： | MTM23224 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SMINI3-G1, 3 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 273K |
| 代理商： | MTM23224 |
Absolute Maximum Ratings
°C
mW
A
V
Unit
2
-16
I
DP
Drain peak current
-4.0
I
D
Drain current
± 8
V
GSS
Gate-Source voltage
-12
V
DSS
Drain-Source voltage
1
500
P
D
Power dissipation
150
T
ch
Channel temperature
55 to +150
T
stg
Storage temperature
Note
Rating
Symbol
Parameter
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
1) Measuring on Ceramic substrate at 40×38×0.1 mm. Absolute maximum rating PD without heat sink shall be made 150 mW.
2) Pulse Width ≦10 s, Duty Cycle ≦1 %
3) Pulse Test:Pulse Width <300 s, Duty Cycle <2 %
Electrical characteristics Ta = 25
°C ± 3°C
pF
110
VDS = -10 V , VGS = 0 V, f = 1 MHz
Coss
Small-signal short-circuit
output capacitance
pF
1200
VDS = -10 V , VGS = 0 V, f = 1 MHz
Ciss
Small-signal short-circuit
input capacitance
m
40
30
ID = -1 A , VGS = -4.0 V
RDS(ON)
Drain resistance 1 *3
V
-1.0
-0.65
-0.3
ID = -1 mA , VDS = -6.0 V
Vth
Gate threshold voltage
A
± 10
VGS = ± 6.4 V , VDS = 0 V
IGSS
Gate-Source cutoff voltage
A
-1.0
VDS = -12 V , VGS = 0 V
IDSS
Drain-Source cutoff
voltage
ns
300
VDD = -6 V , VGS = -4 to 0 V, ID = -1 A
toff
Turn-off time
V
-12
ID = -1 mA , VGS = 0 V
VDSS
Drain-Source voltage
m
55
35
ID = -0.5 A , VGS = -2.5 V
RDS(ON)
Drain resistance 2 *3
S
3.5
ID = -1 A , VDS = -10 V, f = 1 kHz
|Yfs|
Forward transfer
admittance *3
m
75
50
ID = -0.2 A , VGS = -1.8 V
RDS(ON)
Drain resistance 3 *3
ns
50
VDD = -6 V , VGS = 0 to -4 V, ID = -1 A
ton
Turn-on time
pF
110
VDS = -10 V , VGS = 0 V, f = 1 MHz
Crss
Small-signal reverse
transfer capacitance
Typ.
Min.
Unit
Max.
Condition
Symbol
Parameter
Silicon Field Effect Transistors
MTM23110
P-Channel MOS Type
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