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参数资料
| 型号： | MTM76520 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, WSMINI6-F1, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 267K |
| 代理商： | MTM76520 |
Silicon MOS FETs (Small Signal)
Publication date: September 2009
SJF00103BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM76520
Silicon N-channel MOS FET
For DC-DC converter circuits
For switching circuits
Overview
MTM76520 is the dual N-channel MOS FET that is highly suitable for DC-
DC converter and other switching circuits.
Features
Dual N-channel MOS FET in one package
Low on-resistance: Ron = 80 mW (VGS = 4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 280 pF
Halogen free
Small package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)
Low drive voltage: 1.8 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
2.0
A
Peak drain current *1
IDP
12
A
Power dissipation
PD
700 *2
mW
150 *3
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *1: t = 10 s, Duty Cycle < 1%
*2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm
Copper foil of the drain portion should have a area of 300 mm2 or more
*3: Stand-alone (without the board)
Package
Code
WSMini6-F1-B
Pin Name
1: Source 1
4: Source 2
2: Gate 1
5: Gate 2
3: Drain 2
6: Drain 1
Marking Symbol: JA
Internal Connection
3
(D2)
(S2)
4
1
(S1)
2
(G1)
(D1)
6
(G2)
5
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