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参数资料
| 型号： | MTM86627 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, WSSMINI6-F1, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 486K |
| 代理商： | MTM86627 |
Multi Chip Discrete
Publication date: March 2008
SJF00085AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR = 15 V, IF = 700 mA
Low on-resistance: Ron = 80 mW (VGS = –4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 300 pF
Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
Low drive Voltage: 1.8 V drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
FET
Drain-source surrender voltage
VDSS
–20
V
Gate-source surrender voltage
VGSS
±
10
V
Drain current
ID
–2.0
A
Peak drain current
IDP
–8.0
A
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
SBD
Reverse voltage
VR
15
V
Forward current (Average)
IF(AV)
700
mA
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Overall Total power dissipation *
PD
540
mW
Note) *: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
Absolute maximum rating without heat sink for PD is 150 mA
Package
Code
WSSMini6-F1
Pin Name
1: Gate
4: Cathode
2: Source
5: Drain
3: Anode
6: Drain
Marking Symbol: PK
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6
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