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参数资料
| 型号： | MTM86627 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, WSSMINI6-F1, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 486K |
| 代理商： | MTM86627 |
MTM86627
2
SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = –1.0 mA, VGS = 0
–20
V
Drain-source cutoff current
IDSS
VDS = –20 V, VGS = 0
–1.0
m
A
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = –1.0 mA, VDS = –10 V
– 0.4
– 0.75
–1.1
V
Drain-source ON resistance *1
RDS(on)
ID = –1.0 A, VGS = –4.0 V
80
120
mW
ID = –1.0 A, VGS = –2.5 V
100
170
ID = – 0.5 A, VGS = –1.8 V
140
230
Forward transfer admittance *1
Yfs ID = –1.0 A, VDS = –10 V, f = 1 MHz
3.0
S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
300
pF
Short-circuit output capacitance (Common source)
Coss
30
pF
Reverse transfer capacitance (Common source)
Crss
35
pF
Turn-on delay time *2
td(on)
VDD = –10 V, VGS = 0 V to –4 V, ID = –1A
6
ns
Rise time *2
tr
8
ns
Turn-off delay time *2
td(off)
VDD = –10 V, VGS = –4 V to 0 V, ID = –1A
57
ns
Fall time *2
tf
55
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff measurement circuit
VCC = 10 V
PW = 10 s
Duty Cycle ≤ 1%
ID = 1.0 A
RL = 10
VOUT
VIN
D
G
S
VIN
50
td(on)
td(off)
0 V
4 V
VIN
VOUT
10%
90%
10%
tr
tf
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 500 mA
0.42
V
IF = 700 mA
0.45
V
Reverse current
IR
VR = 6 V
90
m
A
VR = 15 V
250
m
A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
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