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参数资料
| 型号： | MTMF8231 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 18000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, THIN, SO8-F1-B, 8 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 406K |
| 代理商： | MTMF8231 |
Silicon MOSFETs (Small Signal)
Publication date: September 2009
SJF00074BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTMF8231
Silicon N-channel MOSFET
For Li-ion battery protection circuit
Overview
MTMF8231 is low Ron N-channel MOSFET designed for Li-ion battery
circuit of notebook computers.
Features
Super Low on resistance: Ron = 3 m (typ.) (VGS = 10 V, ID = 5.0 A)
Thin at-lead package
Incorporating a built-in gate protection-diode
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
30
V
Gate-source surrender voltage
VGSS
±
20
V
Drain current
ID
18
A
Peak drain current
IDP
72
A
Avalanche current
IAS
18
A
Power dissipation *
PD
1.0
W
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
-
55 to +150
°
C
Note) *: Measuring on cglass epoxy board at 25.4 mm × 25.4 mm × 0.8 mm
Absolute maximum rating without heat sink for PD is 500 mA
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
30
V
Drain-source cutoff current
IDSS
VDS = 30 V, VGS = 0
10
m
A
Gate-source cutoff current
IGSS
VGS = ±16 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 10.0 V
1.4
2.5
V
Drain-source ON resistance
RDS(on)
ID = 5.0 A, VGS = 4.5 V
6.5
9.8
m
ID = 5.0 A, VGS = 10 V
3.0
4.2
Forward transfer admittance
Yfs ID = 5.0 A, VDS = 10 V
10
S
Short-circuit input capacitance (Common source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6000
pF
Short-circuit output capacitance (Common source)
Coss
690
pF
Reverse transfer capacitance (Common source)
Crss
420
pF
Avalanche energy capability
EAS
VDD = 24 V, VGS = 10 V to 0 V, ID = 18 A
L = 0.5 mH, Rg = 25, Tch = 25°C (initial)
162
mJ
Turn-on delay time *
td(on)
VDD = 15 V, VGS = 0 V to 10 V, ID = 5.0A
20
ns
Turn-off delay time *
td(off)
VDD = 15 V, VGS = 0 V to 10 V, ID = 5.0A
30
ns
Rise time *
tr
VDD = 15 V, VGS = 10 V to 0 V, ID = 5.0A
400
ns
Fall time *
tf
VDD = 15 V, VGS = 10 V to 0 V, ID = 5.0A
420
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Measurement circuit
Package
Code
SO8-F1-B
Pin Name
1: Source
2: Source
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbol: AA
Intemal Connection
1
2
3
4
8
7
6
5
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