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参数资料
| 型号： | MTMF8233 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, THIN, SO8-F1-B, 8 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 486K |
| 代理商： | MTMF8233 |
MTMF8233
2
SJF00112BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1.0 mA, VGS = 0
30
V
Drain-source cutoff current
IDSS
VDS = 30 V, VGS = 0
10
m
A
Gate-source cutoff current
IGSS
VGS = ±20 V, VDS = 0
±
10
m
A
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 10 V
1.4
1.9
2.5
V
Drain-source ON resistance
RDS(on)1 ID = 9.0 A, VGS = 10 V
1.9
2.8
m
RDS(on)2 ID = 9.0 A, VGS = 4.5 V
4.5
8.0
Forward transfer conductance
Yfs ID = 9.0 A, VDS = 10 V
18
S
Short-circuit input capacitance (Common source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
7000
pF
Short-circuitoutputcapacitance(Commonsource)
Coss
840
pF
Reverse transfer capacitance (Common source)
Crss
680
pF
Turn-on delay time *
td(on)
VDD = 18 V, VGS = 10 V,
ID = 9.0 A, RL = 2.0
40
ns
Rise time *
tr
85
ns
Turn-off delay time *
td(off)
500
ns
Fall time *
tf
560
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t = 10 ms, Duty cycle < 1%
Measurement circuit
ID
VDD
RL
D
G
S
50
Pulse
generator
td(on)
td(off)
tr
tf
VGS
0 V
0
VGS
0
VDD
VDS
10%
90%
10%
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