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参数资料
| 型号： | MTP1302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 260K |
| 代理商： | MTP1302 |
MTP1302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 10 Vdc, ID = 42 Adc)
RDS(on)
19
26
19.5
22
29
mW
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
(VGS = 10 Vdc, ID = 42 Adc)
VDS(on)
0.38
0.82
0.5
0.33
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
gFS
10
16
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd V
0 Vd
Ciss
755
1162
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
370
518
Transfer Capacitance
f = 1.0 MHz)
Crss
102
204
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
7.2
15
ns
Rise Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 10 Vdc
tr
52
104
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
45
90
Fall Time
RG 9.1 )
tf
73
146
Gate Charge
QT
14.5
21.8
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
2.2
(VDS 24 Vdc, ID 20 Adc,
VGS = 5.0 Vdc)
Q2
8.8
Q3
6.8
Gate Charge
QT
27
40.5
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
2.2
(VDS 24 Vdc, ID 20 Adc,
VGS = 10 Vdc)
Q2
10
Q3
7.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.83
0.79
1.1
Vdc
Reverse Recovery Time
trr
38
ns
(IS = 20 Adc, VGS = 0 Vdc,
ta
19
(IS 20 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
20
Reverse Recovery Stored Charge
QRR
36
C
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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