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参数资料
| 型号： | MTP1302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 260K |
| 代理商： | MTP1302 |
MTP1302
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
Drain Current and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
1.0
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
5.0
10
40
ID, DRAIN CURRENT (AMPS)
0.01
25
50
TJ, JUNCTION TEMPERATURE (°C)
3.0
2.0
1.0
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
5.0
20
1000
100
10
1.0
0.1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
0.4
0.8
1.2
10
20
30
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
10
30
15
I DSS
,LEAKAGE
(nA)
40
2.5
1.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
1.5
2.0
5.0
30
,DRAINT
OSOURCE
ONRESIST
ANCE
(OHMS)
DS(on)
45
10
ID, DRAIN CURRENT (AMPS)
0.04
0.02
0.015
0.01
0.005
0
R
15
20
30
,DRAINT
OSOURCE
ONRESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
55
°C
25
°C
TJ = 25°C
15
20
25
30
35
0.2
0.6
1.8
1.6
2.0
1.4
4.5
3.0
3.5
20
15
5.0
25
15
25
35
0.02
0.03
25
35
0.035
0.03
0.025
25
TJ = 25°C
VGS = 3.0 V
4.0 V
TJ = 125°C
25
°C
55
°C
VGS = 10 V
10 V
VGS = 4.5 V
ID = 20 A
VGS = 10 V
VDS ≥ 10 V
TJ = 125°C
100
°C
25
°C
5.0 V
10 V
4.0
75
100
150
125
40
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