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参数资料
| 型号： | MTP27N10E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | LASER MODULE 635NM 4.2MW MVP |
| 中文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/8页 |
| 文件大小： | 230K |
| 代理商： | MTP27N10E |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Device Marking: MTP27N10E
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
100
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Derate above 25
°
C
ID
ID
IDM
27
17
95
Adc
Apk
PD
104
0.83
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 75 Vdc, VGS = 10 Vdc, IL = 27 Apk, L = 0.3 mH, RG = 25
)
109
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
1.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP27N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
27 AMPERES
100 VOLTS
RDS(on) = 0.07 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
相关PDF资料 |
PDF描述 |
|---|---|
| MTP50P03HDL | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM |
| MTP75N03HDL | OSCILLATORS 100PPM -10+70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD |
| MTP8N50E | TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM |
| MTV25N50E | TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM |
| MTW26N15E | TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2955 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTP2955D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTP2955E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTP2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP2955V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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