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| 型号： | MTP3055VL |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 6A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
| 其它名称： | MTP3055VLFS |
June 2000
DISTRIBUTION GROUP*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
Features
? 12 A, 60 V. R DS(ON) = 0.18 ? @ V GS = 5 V
? Critical DC electrical parameters specified at elevated
temperature.
? Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
? Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
? 175 ° C maximum junction temperature rating.
D
G
D
S
TO-220
G
S
Absolut e Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
± 15
Units
V
V
I D
Drain Current
- Continuous
12
A
- Pulsed
42
P D
T J , T STG
Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Junction Temperature Range
48
0.32
-65 to +175
W
W/ ° C
° C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction-to- Case
3.13
° C/W
R θ JA
Thermal Resistance, Junction-to- Ambient
(Note 1)
62.5
° C/W
Package Outlines and Ordering Information
Device Marking
MTP3055VL
Device
MTP3055VL
Package Information
Rails/Tubes
Quantity
45 units
* Die and manufacturing source subject to change without prior notification .
? 1999 Fairchild Semiconductor Corporation
MTP3055VL Rev. A1
相关PDF资料 |
PDF描述 |
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| MTP50P03HDL | MOSFET P-CH 30V 50A TO-220AB |
| MTPD1346-010 | PIN DIODE 1300NM FLAT 2.8MM TO46 |
| MTPD1346-030 | PIN DIODE 1300NM FLAT 2.8MM TO46 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3055VL | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 60V 12A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 12A, TO-220 |
| MTP3055VL_Q | 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP30N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| MTP30N08M | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP30P06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
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