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参数资料
| 型号： | MTP33N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 206K |
| 代理商： | MTP33N10E |
MTP33N10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
118
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 25°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 16.5 Adc)
RDS(on)
0.04
0.06
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 33 Adc)
(ID = 16.5 Adc, TJ = 25°C)
VDS(on)
1.6
2.4
2.1
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc)
gFS
8.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1830
2500
pF
Output Capacitance
Coss
678
1200
Reverse Transfer Capacitance
Crss
559
1100
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 50 Vdc, ID = 33 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
18
40
ns
Rise Time
tr
164
330
TurnOff Delay Time
td(off)
48
100
Fall Time
tf
83
170
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 33 Adc,
VGS = 10 Vdc)
QT
52
110
nC
Q1
12
Q2
32
Q3
24
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 33 Adc, VGS = 0 Vdc)
(IS = 33 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1.0
0.98
2.0
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 33 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
144
ns
ta
108
tb
36
Reverse Recovery Stored Charge
QRR
0.93
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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