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| 型号： | MTP60N10E7L |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MTP60N10E7L |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
TMOS E-FET.
High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for medium voltage, high speed switching
applications in power supplies, converters and PWM motor
controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS 7
Ultra Low On–Resistance Provides Higher Efficiency
Reduced Gate Charge
Features Common to TMOS 7 and TMOS E–FETS
Logic Level Gate Drive
Avalanche Energy Specified
Diode Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
60
48
210
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
242
1.61
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 175
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, PEAK IL = 60 Apk, L = 0.3 mH, RG = 25 W)
EAS
540
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
0.62
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTP60N10E7L/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MTP60N10E7L
TMOS POWER FET
60 AMPERES
100 VOLTS
RDS(on) = 0.022 W
D
S
G
N–Channel
CASE 221A–09, Style 5
TO–220AB
Motorola, Inc. 1999
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