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参数资料
| 型号： | MTP9N25E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/8页 |
| 文件大小： | 206K |
| 代理商： | MTP9N25E |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
250
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
250
Vdc
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°C
— Single Pulse (tp ≤ 10 s)
ID
IDM
9.0
5.7
32
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
80
0.64
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 )
EAS
122
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.56
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP9N25E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MTP9N25E
TMOS POWER FET
9.0 AMPERES
250 VOLTS
RDS(on) = 0.45 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
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