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参数资料
| 型号： | MTP9N25E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 3/8页 |
| 文件大小： | 206K |
| 代理商： | MTP9N25E |
MTP9N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
6
8
10
9
15
18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
3
6
9
12
15
0
0.2
0.4
0.8
1.2
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
100
°C
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
6
12
3
5 V
6 V
7 V
VGS = 10 V
2
3
4
5
6
7
1.0
0.6
50
150
250
TJ = 125°C
0
9
15
18
6
12
3
0
18
0.3
0.4
0.5
0.6
0
3
6
9
12
15
18
15 V
25
°C
25
°C
100
°C
VGS = 10 V
ID = 4.5 A
VGS = 10 V
8 V
12
9 V
8
2.5
1000
0.1
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