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参数资料
| 型号： | MTP36N06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 202K |
| 代理商： | MTP36N06V |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTP36N06V/D
MTP36N06V
Preferred Device
Power MOSFET
32 Amps, 60 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous @ 25 °C
Drain Current Continuous @ 100 °C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
32
22.6
112
Adc
Apk
Total Power Dissipation @ 25 °C
Derate above 25 °C
PD
90
0.6
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
EAS
205
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
1.67
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10
seconds
TL
260
°C
32 AMPERES
60 VOLTS
RDS(on) = 40 mΩ
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP36N06V
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP30N06V
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP30N06V
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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