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参数资料
| 型号： | MTP36N06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 202K |
| 代理商： | MTP36N06V |
MTP36N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
01
2
3
0
18
72
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
13
5
7
9
0
18
54
72
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
018
36
72
0.02
0.06
0.04
0.1
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
036
54
72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
1020
4050
60
10
100
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100°C
25°C
55°C
25°C
TJ = 25°C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125°C
36
54
4
36
54
18
30
VDS ≥ 10 V
TJ = 100°C
55°C
4 V
2
46
8
0.08
0
1000
1
100°C
25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
50
0.6
0.8
1.2
1.6
1.8
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 16 A
1
1.4
175
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