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参数资料
| 型号： | MTP3N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 3/8页 |
| 文件大小： | 183K |
| 代理商： | MTP3N60E |
MTP3N60E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Breakdown Voltage Variation
With Temperature
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance Variation
With Temperature
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
ON–RESIST
ANCE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
V
GS(th)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZE
D
V
BR(DSS)
,DRAIN–T
O–SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
8
6
4
2
20
16
12
8
4
0
1.2
1.1
1
0.9
0.8
–50
–25
0
25
50
75
100
125
150
10
8
6
4
0
8
6
4
2
0
1.2
1.1
1
0.9
0.8
–50
0
50
100
150
6
2
0
10
6
4
2
0
7 V
6 V
5 V
VDS = VGS
ID = 0.25 mA
TJ = 25°C
–55
°C
100
°C
VGS = 0
ID = 250 A
VGS = 10 V
ID = 2 A
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
0.7
VDS ≥ 10 V
1
3
5
7
9
–25
25
75
125
–50
0
50
100
150
–25
25
75
125
0
4
TJ = 25°C
–55
°C
100
°C
3
0
2
1
2
6
10
14
18
2
8
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相关代理商/技术参数 |
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|---|---|
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