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参数资料
| 型号： | MTP40N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 98K |
| 代理商： | MTP40N10E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MTP40N10E/D
MTP40N10E
Preferred Device
Power MOSFET
40 Amps, 100 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
40
29
140
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
169
1.35
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc, Peak
IL = 40 Apk, L = 1.0 mH, RG = 25 W)
EAS
800
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
R
θJC
R
θJA
0.74
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
40 AMPERES
100 VOLTS
RDS(on) = 40 m
Device
Package
Shipping
ORDERING INFORMATION
MTP40N10E
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP40N10E
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP40N10E
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred devices are recommended choices for future use
and best overall value.
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