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参数资料
| 型号： | MTP40N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 98K |
| 代理商： | MTP40N10E |
MTP40N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
0
1234
56
78
9
10
20
10
40
30
60
50
80
70
0
VGS = 10 V
TJ = 25°C
23
4
5
6
7
8
20
10
40
30
60
50
80
70
0
10
2030
40
5060
70
80
0.02
0.01
0.04
0.03
0.06
0.05
0.07
0
VGS = 10 V
TJ = 100°C
01020
30
40
50
60
70
80
0.020
0.015
0.030
0.025
0.010
VGS = 10 V
TJ = 25°C
0.040
0.035
0.050
0.045
-50
-25
0
25
50
75
100
125
150
0.4
0.2
0.8
0.6
1.2
1.0
2.0
1.4
0
VGS = 10 V
ID = 20 A
1.6
1.8
0
102030
40
60
70
80
100
10
100
1000
1.0
VGS = 0 V
50
90
8 V
9 V
7 V
6 V
5 V
VDS ≥ 10 V
100°C
25°C
TJ = -55°C
25°C
-55°C
15 V
100°C
TJ = 125°C
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