参数资料
型号: MTP50P03HDL
厂商: ON Semiconductor
文件页数: 8/8页
文件大小: 0K
描述: MOSFET P-CH 30V 50A TO-220AB
产品变化通告: Product Obsolescence 11/Feb/2009
标准包装: 50
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 25A,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 100nC @ 5V
输入电容 (Ciss) @ Vds: 4900pF @ 25V
功率 - 最大: 125W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: MTP50P03HDLOS
MTP50P03HDL
PACKAGE DIMENSIONS
TO?220
CASE 221A?09
ISSUE AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
?T?
SEATING
PLANE
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
H
Q
Z
L
V
G
B
4
1 2 3
N
D
A
K
F
T
U
S
R
J
C
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.020 0.055 0.508 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ??? 1.15 ???
Z ??? 0.080 ??? 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
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MTP50P03HDL/D
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