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参数资料
| 型号： | MTP52N06V |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 205K |
| 代理商： | MTP52N06V |
MTP52N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
100
80
60
40
20
0
2
0
7.5
7
5
3
2.5
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 10 V
0.035
20
0
0.03
0
40
60
80
100
TJ = 100°C
25°C
55°C
TJ = 25°C
0.023
0.015
5
VGS = 10 V
15 V
VGS = 10 V
ID = 26 A
1.75
1.5
1
0.5
0.25
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1
0
1020
30405060
468
10
100
80
60
40
20
0
24
6
8
0.02
0.015
0.01
0.021
0.019
0.017
25
45
65
85
105
100
10
100°C
175
2
110
90
70
50
30
10
13
57
9
90
70
50
30
10
110
3.5
4.5
5.5
6.5
0.025
0.005
30
10
50
70
90
110
0.022
0.020
0.018
0.016
15
35
55
75
95
1.25
0.75
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相关代理商/技术参数 |
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|---|---|
| MTP52N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
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| MTP55N06Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
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