参数资料
型号: MTP6N60
厂商: STMICROELECTRONICS
元件分类: JFETs
英文描述: 6.8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, 3 PIN
文件页数: 1/9页
文件大小: 320K
代理商: MTP6N60
MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 1
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
RDS(on)
ID
MTP6N60
600 V
< 1.2
6.8 A
1
2
3
TO-220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain- gate Voltage (RGS = 20 k
)600
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
oC6.8
A
ID
Drain Current (continuous) at Tc = 100
oC4.2
A
IDM(
)
Drain Current (pulsed)
30
A
Ptot
Total Dissipation at Tc = 25
oC125
W
Derating Factor
1
W/
oC
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
) Pulse width limited by safe operating area
1/9
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