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参数资料
| 型号： | MTP6N60 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 6.8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 320K |
| 代理商： | MTP6N60 |
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 300 V
ID = 3 A
RG = 50
VGS = 10 V
(see test circuit, figure 3)
50
140
65
175
ns
(di/dt)on
Turn-on Current Slope
VDD = 480 V
ID = 6 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
240
A/
s
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V
ID = 6 A
VGS = 10 V
78
8
41
98
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480 V
ID = 6 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
100
27
145
125
34
180
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
)
Source-drain Current
(pulsed)
3.8
24
A
VSD (
)
Forward On Voltage
ISD = 6 A
VGS = 0
2
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 6 A
di/dt = 100 A/
s
VDD = 100 V
Tj = 150
oC
(see test circuit, figure 5)
750
13.5
38
ns
C
A
(
) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
MTP6N60
3/9
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相关代理商/技术参数 |
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| MTP75 | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Three-Phase Bridge Rectifier, 75A |
| MTP75A | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A |
| MTP75D | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A |
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